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Электронный компонент: UMT2N

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EMT3 / IMT3A
Transistors
Rev.A
1/2
General purpose (dual transistors)
EMT3 / IMT3A

Features
1) Two 2SA1037AK chips in a EMT or SMT package.

Equivalent circuits
(1)
(2)
(3)
(4)
(5)
(6)
(6)
(5)
(4)
(3)
(2)
(1)
IMT3A
EMT3
Tr
2
Tr
1
Tr
1
Tr
2

Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
60
-
50
-
6
-
150
300(TOTAL)
150(TOTAL)
EMT3
IMT3A
150
-
55
to
+
150
Unit
V
V
V
mA
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2

Package, marking, and packaging specifications
EMT3
EMT6
T3
T2R
8000
IMT3A
SMT6
T3
T108
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
ROHM : EMT6
EMT3
ROHM : SMT6
EIAJ : SC-74
IMT3A
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions


Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
-
60
-
50
-
6
-
-
-
120
-
-
-
-
-
-
-
-
140
-
-
-
-
0.1
-
0.1
-
0.5
560
-
V
V
V
A
A
V
-
MHz
Cob
-
4
5
pF
I
C
=-
50
A
I
C
=-
1mA
I
E
=-
50
A
V
CB
=-
60V
V
EB
=-
6V
V
CE
=-
12V, I
E
=
2mA, f
=
100MHz
V
CE
=-
12V, I
E
=
0A, f
=
1MHz
I
C
/I
B
=-
50mA/
-
5mA
V
CE
=-
6V, I
C
=-
1mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
EMT3 / IMT3A
Transistors
Rev.A
2/2
Electrical characteristics curves
Fig.1 Grounded emitter propagation
characteristics
-
0.2
COLLECTOR CURRENT : Ic (
mA)
-
50
-
20
-
10
-
5
-
2
-
1
-
0.5
-
0.2
-
0.1
-
0.4
-
0.6
-
0.8
-
1.0
-
1.2
-
1.4
-
1.6
V
CE
=
-
6V
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Ta=100C
25C
-
40C
Fig.2 Grounded emitter output
characteristics (I)
-
0.4
-
4
-
8
-
1.2
0
-
2
-
6
-
10
-
0.8
-
1.6
-
2.0
-
3.5
A
-
7.0
-
10.5
-
14.0
-
17.5
-
21.0
-
24.5
-
28.0
-
31.5
I
B
=0
Ta=25C
-
35.0
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
Fig.3 Grounded emitter output
characteristics (II)
-
40
-
80
-
5
-
3
-
4
-
2
-
1
-
20
-
60
-
100
0
I
B
=0
Ta=25C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
-
50
A
-
100
-
150
-
200
-
250
-
500
-
450
-
400
-
350
-
300

Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
DC CURRENT GAIN : h
FE
Ta=25C
V
CE
=
-
5V
-
3V
-
1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=
-
6V
Ta=100C
-
40C
25C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
1
-
0.5
-
0.2
-
0.05
Ta=25C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=
50
20
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)

Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
-
0.1
-
0.2
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
1
-
0.5
-
0.2
-
0.05
COLLECTOR CURRENT : I
C
(
mA)
l
C
/l
B
=10
Ta=100C
25C
-
40C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
-
0.5
-
20
2
emitter-base voltage
5
10
-
1
-
2
-
5
-
10
20
Cib
Cob
Ta=25C
f=1MHz
I
E
=
0A
I
C
=
0A
Fig.8 Gain bandwidth product vs.
emitter current
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
EMITTER CURRENT : I
E
(
mA)
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25C
V
CE
=
-
12V
Appendix
Appendix1-Rev1.1


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Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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